jiangsu changjiang electronics technology co., ltd sot-89 plastic-encapsulate transistors 2sd2150 transistor npn features power dissipation p cm : 0.5 w ta m b = 2 5 collector current i cm : 3 a collector-base voltage v (br)cbo : 40 v operating and storage j unction temperature range t j t stg : -55 to +150 electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 50 a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e = 50 a,i c =0 6 v collector cut-off current i cbo v cb = 30 v,i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v,i c =0 0.1 a dc current gain h fe(1) v ce = 2 v,i c = 0.1 a 180 560 collector-emitter saturation voltage v ce(sat) i c = 2 a,i b =100ma 0.5 v transition frequency f t v ce = 2 v,i c =0.5a ,f= 100 mhz 290 mhz collector output capacitance c ob v cb = 10 v,i e =0,f= 1 mhz 25 pf classification of h fe(1) rank q r s range 120-270 180-390 270-560 marking cfq cfr cfs sot-89 1. base 2. collector 3. emitter 1 2 3
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